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HPI6FFR2 G12864B D6432 PA1220 10035 NE68800 BDX33A 1N3671RA
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  s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = - 30v r d s ( o n ) 200m ( v g s = - 10v ) r d s ( o n ) 380m ( v g s = - 4.5v ) g s d 2 3 1 a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol 5 s ec s teady s tate uni t dr ai n- s our c e v ol tage v d s g ate- s our c e v ol tage v g s conti nuous dr ai n cur r ent * 1 t a = 25 - 1.4 - 1.3 t a = 70 - 1.1 - 1.0 p ul s ed dr ai n cur r ent * 2 i d m p ow er di s s i pati on * 1 t a = 25 0.9 0.7 w t a = 70 0.57 0.45 t her m al res i s tanc e.j unc ti on- to- a m bi ent * 1 120 145 * 3 140 175 j unc ti on t em per atur e t j s tor age t em per atur e range t st g - 10 p d r t h ja 150 - 30 20 i d - 55 to 150 v /w a * 1 p ul s e w i dth l i m i ted by m ax i m um j unc ti on tem per atur e. * 2 s ur fac e m ounted on f r4 b oar d, t 5 s ec . * 3 s ur fac e m ounted on f r4 b oar d. 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h p-cha nne l mo s f e t si2 3 0 3 bds-hf ( k i 2 3 0 3 b d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = - 250 a , v g s = 0v - 30 v v d s = - 30v , v g s = 0v - 1 v d s = - 30v , v g s = 0v , t j = 55 - 10 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 20v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 1.0 - 3.0 v v g s = - 10v , i d = - 1.7a 200 v g s = - 4.5v , i d = - 1.3a 380 o n s tate dr ai n c ur r ent * 1 i d ( o n ) v g s = - 10v , v d s - 5v - 6 a f or w ar d t r ans c onduc tanc e g fs v d s = - 5v , i d = - 1.7a 2.0 s input capac i tanc e * 2 c i ss 180 o utput capac i tanc e * 2 c o ss 50 rev er s e t r ans fer capac i tanc e * 2 c r ss 35 t otal g ate char ge * 2 q g 4.3 10 g ate s our c e char ge * 2 q g s 0.8 g ate dr ai n char ge * 2 q g d 1.3 t ur n- o n del ay t i m e * 3 t d ( o n ) 55 80 t ur n- o n ri s e t i m e * 3 t r 40 60 t ur n- o ff del ay t i m e * 3 t d ( o f f ) 10 20 t ur n- o ff f al l t i m e * 3 t f 10 20 5 s ec - 0.75 s teady s tate - 0.6 di ode f or w ar d v ol ta g e v s d i s = - 0.75a ,v g s = 0v - 0.85 - 1.2 v m ax i m um b ody - di ode conti nuous cur r ent i s a pf nc v g s = - 4.5v , v d s = - 15v , r l = 15 ,r g e n = 6 i d = 1.0a ns z er o g ate v ol tage dr ai n cur r ent i d s s a m r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e * 1 v g s = 0v , v d s = - 15v , f= 1m hz v g s = - 10 v , v d s = - 15v , i d = - 1.7 a * 1 p ul s e tes t: p w 300u s duty c y c l e 2% . * 2 f or de s ig n a id o nly , not s ubj ec t to pr oduc ti on tes ti ng. * 3 s w i tc hi ng ti m e i s es s enti al l y i ndependent of oper ati ng tem per atur e. mar k ing m ar k i ng l3* f p-cha nne l mo s f e t si2 3 0 3 bds-hf ( k i 2 3 0 3 b d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t ty pic al c har ac t er is it ic s 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 1 2 3 4 5 - on-resistance ( r ds(on) ) 0 50 100 150 200 250 300 0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 10 0 1 2 3 4 5 6 7 o n -r e s i s t a n c e v s . d r a i n c u r r e n t s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o v d s - drai n - to - so u r ce v o l ta g e ( v ) - drain current (a) i d v g s - ga te - to - so u r ce v o l ta g e ( v ) - drain current (a) i d t c = -55 c 125 c 5 v v g s = 1 0 t h r u 6 v 2 , 3 v 4 v g a t e c h a r g e - ga te - to - s ou r c e v o l ta g e ( v ) q g - t o t a l g a t e char g e ( n c ) v d s - drai n - to - so u r ce v o l ta g e ( v ) c - capacitance (pf) v gs c r s s c o s s c i s s v d s = 1 5 v i d = 1 . 7 a i d - drain current (a) capacitance o n -r e s i s t a n c e v s . j u n c t i o n t emperature v g s = 1 0 v i d = 1 . 7 a t j - ju n cti o n t empe ra tu r e ( c) (normalized) - on-resistance ( r ds(on) ) v g s = 1 0 v v g s = 4 . 5 v 25 c p-cha nne l mo s f e t si2 3 0 3 bds-hf ( k i 2 3 0 3 b d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m o s f e t . ty pic al c har ac t er is it ic s -0.6 -0.3 0.0 0.3 0.6 0.9 -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 t j = 1 5 0 c e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s r e w o p e s l u p e l g n i s e g a t l o v d l o h s e r h t s qu a r e w a v e p u l s e d u r a t i o n ( s e c ) - on-resistance ( r ds(on) ) v s d v ) v ( e g a t l o v n i a r d - o t - e c r u o s - g s - ga te - to - so u r ce v o l ta g e ( v ) - source current (a) i s t j - t empe r a t u r e ( ) c e s ( e m i t ) c p o w e r ( w ) i d = 1 . 7 a i d = 2 5 0 a v a r i a n c e ( v ) v gs(th) 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 2 5 c 1 t a = 2 5 c s a f e o p e r a t i n g a r e a , j u n c t i o n - t o - c a s e v d s - drai n - to - so u r ce v o l ta g e ( v ) 100.0 1.0 0.1 1 10 100 0.01 10.0 - drain current (a) i d 0.1 limited by r d s ( o n ) t a = 2 5 c s in g l e p u l s e 1 0 m s 1 0 0 m s 1 0 s 1 0 0 s 1 m s d c , 1 0 0 s , 1 0 s, 1 s 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 p-cha nne l mo s f e t si2 3 0 3 bds-hf ( k i 2 3 0 3 b d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 5 m o s f e t ty pic al c har ac t er is it ic s normalized t h e r m a l t r a n s i e n t i m p e d a n c e , j u n c t i o n - t o - a m b i e n t sq u a r e w a v e pu l se du r a ti o n (se c ) norm a l i z e d e f f e c t i v e t r a n s i e n t t herm a l i mped a n c e 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 0 0 6 0 1 1 0.2 0.1 0.05 0.02 s in g l e p u l s e d u ty c y cl e = 0 . 5 1. duty cycle, d = 2. per unit base = r t h j a = 62.5 c/w 3. t j m - t a = p d m z t h j a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m 100 p-cha nne l mo s f e t si2 3 0 3 bds-hf ( k i 2 3 0 3 b d s - h f)


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